Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer

Optical gain characteristics of InGaN∕GaN double quantum well (QW) structures with embedded AlGaN δ layer are investigated using the multiband effective mass theory. These results are compared with those of single QW structure without a δ layer. The theoretical energies show very good agreement with...

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Veröffentlicht in:Applied physics letters 2007-01, Vol.90 (2)
Hauptverfasser: Park, Seoung-Hwan, Park, Jongwoon, Yoon, Euijoon
Format: Artikel
Sprache:eng
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Zusammenfassung:Optical gain characteristics of InGaN∕GaN double quantum well (QW) structures with embedded AlGaN δ layer are investigated using the multiband effective mass theory. These results are compared with those of single QW structure without a δ layer. The theoretical energies show very good agreement with the experimental results for both single and double QW structures. The inclusion effect of a δ layer is found to be dominant at a relatively low carrier density. A double QW structure has larger optical gain than the single QW structure, in particular, at higher carrier density.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2431477