Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al∕MgO∕Co50Fe50 magnetic tunnel junctions with exchange biasing

Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al∕MgO∕Co50Fe50 magnetic tunnel junctions with exchange biasing

Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50∕Ru∕Co90Fe10 trilayer exchange-biased with an IrM...

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Veröffentlicht in:Applied physics letters 2007-01, Vol.90 (1)
Hauptverfasser: Marukame, Takao, Ishikawa, Takayuki, Hakamata, Shinya, Matsuda, Ken-ichi, Uemura, Tetsuya, Yamamoto, Masafumi
Format: Artikel
Sprache:eng
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Zusammenfassung:Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50∕Ru∕Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10∕IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2K. A high tunneling spin polarization of 0.88 at 4.2K was estimated for epitaxial CCFA films with the B2 structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2428412