Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers
In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs...
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Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (22) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs were deposited on GaAs substrate which has been cleaned with HCl and (NH4)2S solutions. Equivalent oxide thickness (EOT) of 12.5Å and dielectric leakage current density of 2.0×10−4A∕cm2 at ∣VG−VFB∣=1V with low capacitance-voltage frequency dispersion have been obtained. The results indicate that the use of a thin silicon/germanium IPL assists in scaling EOT below 13Å, while improving the quality of the interface. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2396912 |