Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs...

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Veröffentlicht in:Applied physics letters 2006-11, Vol.89 (22)
Hauptverfasser: Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs were deposited on GaAs substrate which has been cleaned with HCl and (NH4)2S solutions. Equivalent oxide thickness (EOT) of 12.5Å and dielectric leakage current density of 2.0×10−4A∕cm2 at ∣VG−VFB∣=1V with low capacitance-voltage frequency dispersion have been obtained. The results indicate that the use of a thin silicon/germanium IPL assists in scaling EOT below 13Å, while improving the quality of the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2396912