Temperature dependence of the GaAsN conduction band structure

In this contribution the authors investigate the temperature-dependent conduction band structure of Ga As 1 − x N x for different nitrogen contents. An analysis of their experimental photoreflectance data based on the two-band version of the band anticrossing model shows that with decreasing temperature the energy of the effective nitrogen level E N in GaAsN epilayers shifts significantly to higher energies. Simultaneously, the coupling parameter C N M between the nitrogen states and the host conduction band also rises to higher values.