Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20mA injection current, it was found that forward voltages were 3.94 and 4.05V while the output powers were 7.54 and 9.02mW for the planar ITO LED and...

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Veröffentlicht in:Applied physics letters 2006-11, Vol.89 (20)
Hauptverfasser: Kuo, C. H., Chen, C. M., Kuo, C. W., Tun, C. J., Pan, C. J., Pong, B. J., Chi, G. C.
Format: Artikel
Sprache:eng
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Zusammenfassung:The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20mA injection current, it was found that forward voltages were 3.94 and 4.05V while the output powers were 7.54 and 9.02mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2387941