Effects of annealing on carrier lifetime in 4H-SiC

Effects of annealing on carrier lifetime in 4H-SiC

We present results of a thermal anneal process that increases the minority carrier lifetime in SiC substrates to in excess of 3μs, compared to the starting as-grown substrates with lifetimes typically in the

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Veröffentlicht in:Journal of applied physics 2006-12, Vol.100 (11)
Hauptverfasser: Jenny, J. R., Malta, D. P., Tsvetkov, V. F., Das, M. K., Hobgood, H. McD, Carter, C. H., Kumar, R. J., Borrego, J. M., Gutmann, R. J., Aavikko, R.
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Sprache:eng
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Zusammenfassung:We present results of a thermal anneal process that increases the minority carrier lifetime in SiC substrates to in excess of 3μs, compared to the starting as-grown substrates with lifetimes typically in the
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2372311