Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film

The photoluminescence spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton of 3.3437eV and a transition between free electrons and acceptor levels of 3.2924eV. Calculated acceptor binding energy is about 0.1455eV. Thermal activation and doping mechanism of this film have been suggested by the analysis of x-ray photoelectron spectroscopy. p-type formation mechanism of As doped ZnO thin film is related to the AsZn–2VZn complex model. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.