Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process

The authors report flexible and low-voltage pentacene organic field-effect transistors (OFETs) constructed with an aluminum foil gate electrode, which was fabricated by the simple and low-cost roll-to-roll lamination process. Electropolishing the surface of laminated aluminum foil and spin coating it with an additional thin polymer film resulted in a gate dielectric surface with a root-mean-square roughness of about 0.85 nm . These pentacene OFETs with a poly ( α -methylstyrene)/anodized Al 2 O 3 dual-layered gate dielectric exhibit a mobility of 0.52 cm 2 ∕ V s , an on-off ratio of 10 5 , a subthreshold swing of 317 mV /decade, and little hysteresis when operating at − 5 V .