Origin of forward leakage current in GaN-based light-emitting devices
The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template ( ∼ 2 μ m ) with high dislocation density [low ( 10 9 cm − 2 ) ] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN templat...
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| Veröffentlicht in: | Applied physics letters 2006-09, Vol.89 (13), p.132117-132117-3 |
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| container_end_page | 132117-3 |
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| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Lee, S. W. Oh, D. C. Goto, H. Ha, J. S. Lee, H. J. Hanada, T. Cho, M. W. Yao, T. Hong, S. K. Lee, H. Y. Cho, S. R. Choi, J. W. Choi, J. H. Jang, J. H. Shin, J. E. Lee, J. S. |
| description | The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template
(
∼
2
μ
m
)
with high dislocation density [low
(
10
9
cm
−
2
)
] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template
(
∼
20
μ
m
)
with comparatively low dislocation density [high
(
10
8
cm
−
2
)
] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied. |
| doi_str_mv | 10.1063/1.2357930 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2357930</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c423t-b8c5430c98cf2c8596df2c24f74761c8f52259edc6322a57afe4dd294ec88ad23</originalsourceid><addsrcrecordid>eNp1kE1LxDAYhIMoWFcP_oNePWTNZ5teBFnWVVjci55DNnlTo91Wkqj477fSXj0NwzwMzCB0TcmSkorf0iXjsm44OUEFJXWNOaXqFBWEEI6rRtJzdJHS-2gl47xA610MbejLwZd-iD8murID82FaKO1XjNDnckw35hnvTYIxDO1bxnAIOYe-LR18BwvpEp150yW4mnWBXh_WL6tHvN1tnlb3W2wF4xnvlZWCE9so65lVsqncqEz4WtQVtcpLxmQDzlacMSNr40E4xxoBVinjGF-gm6nXxiGlCF5_xnAw8VdTov_2a6rn_SN7N7HJhmxyGPr_4ekEPXg9n6A74EeagmJH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Origin of forward leakage current in GaN-based light-emitting devices</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Lee, S. W. ; Oh, D. C. ; Goto, H. ; Ha, J. S. ; Lee, H. J. ; Hanada, T. ; Cho, M. W. ; Yao, T. ; Hong, S. K. ; Lee, H. Y. ; Cho, S. R. ; Choi, J. W. ; Choi, J. H. ; Jang, J. H. ; Shin, J. E. ; Lee, J. S.</creator><creatorcontrib>Lee, S. W. ; Oh, D. C. ; Goto, H. ; Ha, J. S. ; Lee, H. J. ; Hanada, T. ; Cho, M. W. ; Yao, T. ; Hong, S. K. ; Lee, H. Y. ; Cho, S. R. ; Choi, J. W. ; Choi, J. H. ; Jang, J. H. ; Shin, J. E. ; Lee, J. S.</creatorcontrib><description>The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template
(
∼
2
μ
m
)
with high dislocation density [low
(
10
9
cm
−
2
)
] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template
(
∼
20
μ
m
)
with comparatively low dislocation density [high
(
10
8
cm
−
2
)
] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2357930</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2006-09, Vol.89 (13), p.132117-132117-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c423t-b8c5430c98cf2c8596df2c24f74761c8f52259edc6322a57afe4dd294ec88ad23</citedby><cites>FETCH-LOGICAL-c423t-b8c5430c98cf2c8596df2c24f74761c8f52259edc6322a57afe4dd294ec88ad23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2357930$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Lee, S. W.</creatorcontrib><creatorcontrib>Oh, D. C.</creatorcontrib><creatorcontrib>Goto, H.</creatorcontrib><creatorcontrib>Ha, J. S.</creatorcontrib><creatorcontrib>Lee, H. J.</creatorcontrib><creatorcontrib>Hanada, T.</creatorcontrib><creatorcontrib>Cho, M. W.</creatorcontrib><creatorcontrib>Yao, T.</creatorcontrib><creatorcontrib>Hong, S. K.</creatorcontrib><creatorcontrib>Lee, H. Y.</creatorcontrib><creatorcontrib>Cho, S. R.</creatorcontrib><creatorcontrib>Choi, J. W.</creatorcontrib><creatorcontrib>Choi, J. H.</creatorcontrib><creatorcontrib>Jang, J. H.</creatorcontrib><creatorcontrib>Shin, J. E.</creatorcontrib><creatorcontrib>Lee, J. S.</creatorcontrib><title>Origin of forward leakage current in GaN-based light-emitting devices</title><title>Applied physics letters</title><description>The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template
(
∼
2
μ
m
)
with high dislocation density [low
(
10
9
cm
−
2
)
] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template
(
∼
20
μ
m
)
with comparatively low dislocation density [high
(
10
8
cm
−
2
)
] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAYhIMoWFcP_oNePWTNZ5teBFnWVVjci55DNnlTo91Wkqj477fSXj0NwzwMzCB0TcmSkorf0iXjsm44OUEFJXWNOaXqFBWEEI6rRtJzdJHS-2gl47xA610MbejLwZd-iD8murID82FaKO1XjNDnckw35hnvTYIxDO1bxnAIOYe-LR18BwvpEp150yW4mnWBXh_WL6tHvN1tnlb3W2wF4xnvlZWCE9so65lVsqncqEz4WtQVtcpLxmQDzlacMSNr40E4xxoBVinjGF-gm6nXxiGlCF5_xnAw8VdTov_2a6rn_SN7N7HJhmxyGPr_4ekEPXg9n6A74EeagmJH</recordid><startdate>20060925</startdate><enddate>20060925</enddate><creator>Lee, S. W.</creator><creator>Oh, D. C.</creator><creator>Goto, H.</creator><creator>Ha, J. S.</creator><creator>Lee, H. J.</creator><creator>Hanada, T.</creator><creator>Cho, M. W.</creator><creator>Yao, T.</creator><creator>Hong, S. K.</creator><creator>Lee, H. Y.</creator><creator>Cho, S. R.</creator><creator>Choi, J. W.</creator><creator>Choi, J. H.</creator><creator>Jang, J. H.</creator><creator>Shin, J. E.</creator><creator>Lee, J. S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060925</creationdate><title>Origin of forward leakage current in GaN-based light-emitting devices</title><author>Lee, S. W. ; Oh, D. C. ; Goto, H. ; Ha, J. S. ; Lee, H. J. ; Hanada, T. ; Cho, M. W. ; Yao, T. ; Hong, S. K. ; Lee, H. Y. ; Cho, S. R. ; Choi, J. W. ; Choi, J. H. ; Jang, J. H. ; Shin, J. E. ; Lee, J. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c423t-b8c5430c98cf2c8596df2c24f74761c8f52259edc6322a57afe4dd294ec88ad23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, S. W.</creatorcontrib><creatorcontrib>Oh, D. C.</creatorcontrib><creatorcontrib>Goto, H.</creatorcontrib><creatorcontrib>Ha, J. S.</creatorcontrib><creatorcontrib>Lee, H. J.</creatorcontrib><creatorcontrib>Hanada, T.</creatorcontrib><creatorcontrib>Cho, M. W.</creatorcontrib><creatorcontrib>Yao, T.</creatorcontrib><creatorcontrib>Hong, S. K.</creatorcontrib><creatorcontrib>Lee, H. Y.</creatorcontrib><creatorcontrib>Cho, S. R.</creatorcontrib><creatorcontrib>Choi, J. W.</creatorcontrib><creatorcontrib>Choi, J. H.</creatorcontrib><creatorcontrib>Jang, J. H.</creatorcontrib><creatorcontrib>Shin, J. E.</creatorcontrib><creatorcontrib>Lee, J. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, S. W.</au><au>Oh, D. C.</au><au>Goto, H.</au><au>Ha, J. S.</au><au>Lee, H. J.</au><au>Hanada, T.</au><au>Cho, M. W.</au><au>Yao, T.</au><au>Hong, S. K.</au><au>Lee, H. Y.</au><au>Cho, S. R.</au><au>Choi, J. W.</au><au>Choi, J. H.</au><au>Jang, J. H.</au><au>Shin, J. E.</au><au>Lee, J. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of forward leakage current in GaN-based light-emitting devices</atitle><jtitle>Applied physics letters</jtitle><date>2006-09-25</date><risdate>2006</risdate><volume>89</volume><issue>13</issue><spage>132117</spage><epage>132117-3</epage><pages>132117-132117-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template
(
∼
2
μ
m
)
with high dislocation density [low
(
10
9
cm
−
2
)
] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template
(
∼
20
μ
m
)
with comparatively low dislocation density [high
(
10
8
cm
−
2
)
] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2357930</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2006-09, Vol.89 (13), p.132117-132117-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Origin of forward leakage current in GaN-based light-emitting devices |
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