Composition dependence of band offsets for (LaAlO3)1−x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy

Electronic structures of (LaAlO3)1−x(Al2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorpt...

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Veröffentlicht in:Applied physics letters 2006-09, Vol.89 (12)
Hauptverfasser: Yasuhara, R., Komatsu, M., Takahashi, H., Toyoda, S., Okabayashi, J., Kumigashira, H., Oshima, M., Kukuruznyak, D., Chikyow, T.
Format: Artikel
Sprache:eng
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Zusammenfassung:Electronic structures of (LaAlO3)1−x(Al2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorption spectroscopy. The systematic peak shifts due to chemical shifts were observed for core-level spectra. The conduction-band offset became smaller with increasing ratio of Al2O3, while the valence-band offset became larger. This precise determination of the band diagram revealed that LaAlO3 (x=0) had the optimum band offset for LSI gate dielectrics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2356377