Composition dependence of band offsets for (LaAlO3)1−x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy
Electronic structures of (LaAlO3)1−x(Al2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorpt...
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Veröffentlicht in: | Applied physics letters 2006-09, Vol.89 (12) |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Electronic structures of (LaAlO3)1−x(Al2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorption spectroscopy. The systematic peak shifts due to chemical shifts were observed for core-level spectra. The conduction-band offset became smaller with increasing ratio of Al2O3, while the valence-band offset became larger. This precise determination of the band diagram revealed that LaAlO3 (x=0) had the optimum band offset for LSI gate dielectrics. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2356377 |