Dielectric properties of Bi1.5Zn1.0Nb1.5O7∕Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition

Bi 1.5 Zn 1.0 Nb 1.5 O 7 ∕ Mn -doped Ba0.6Sr0.4TiO3 heterolayered films have been deposited on (111) Nb:SrTiO3 substrate by pulsed laser deposition. The heterolayered films were found to possess a medium permittivity around 200, a low loss tangent of 0.0025, and a relatively high tunability up to 25% measured with dc bias field of 850kV∕cm. The authors analyzed the bias field dependent permittivity of the heterolayered films using layer model. Based on the analysis, a structure with the tunability as high as 40% under a bias field of 420kV∕cm was suggested after optimizing the thickness of the component layers.