Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

An ultralow resistance-area (RA) product of 0.4Ω(μm)2 was achieved in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with a high magnetoresistance ratio of 57% at room temperature. Various growth conditions for polycrystalline MgO(001) tunneling barrier were optimized to improve the crystalline orientati...

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Veröffentlicht in:Applied physics letters 2006-10, Vol.89 (16)
Hauptverfasser: Nagamine, Yoshinori, Maehara, Hiroki, Tsunekawa, Koji, Djayaprawira, David D., Watanabe, Naoki, Yuasa, Shinji, Ando, Koji
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container_issue 16
container_start_page
container_title Applied physics letters
container_volume 89
creator Nagamine, Yoshinori
Maehara, Hiroki
Tsunekawa, Koji
Djayaprawira, David D.
Watanabe, Naoki
Yuasa, Shinji
Ando, Koji
description An ultralow resistance-area (RA) product of 0.4Ω(μm)2 was achieved in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with a high magnetoresistance ratio of 57% at room temperature. Various growth conditions for polycrystalline MgO(001) tunneling barrier were optimized to improve the crystalline orientation of the MgO(001) layer, which resulted in a significant enhancement of magnetoresistance in an ultralow RA region below 1Ω(μm)2. Removal of residual H2O molecules from a growth chamber was especially effective in improving the crystalline orientation. The present achievements will enable the development of highly sensitive read heads for ultrahigh-density hard disk drives.
doi_str_mv 10.1063/1.2352046
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title Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
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