Extremely weak surface emission from (0001) c -plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
We studied the anisotropic optical properties of c -plane Al x Ga 1 − x N multiple quantum wells and m -plane Al x Ga 1 − x N single layer grown on a SiC substrate. Very weak surface emission was detected from c -plane samples with x = 0.66 - 0.76 (emission wavelength of 228 - 240 nm ), although str...
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| Veröffentlicht in: | Applied physics letters 2006-08, Vol.89 (8), p.081121-081121-3 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We studied the anisotropic optical properties of
c
-plane
Al
x
Ga
1
−
x
N
multiple quantum wells and
m
-plane
Al
x
Ga
1
−
x
N
single layer grown on a SiC substrate. Very weak surface emission was detected from
c
-plane samples with
x
=
0.66
-
0.76
(emission wavelength of
228
-
240
nm
), although strong surface emission was detected from
c
-plane samples with
x
=
0
-
0.41
(
280
-
365
nm
)
and
m
-plane samples with
x
=
0
-
0.76
(
240
-
365
nm
)
. These results indicate that crystal-field splitoff hole valence band plays an important role in
(
E
||
c
)
polarization and isotropic emissions from
Al
x
Ga
1
−
x
N
with
x
≧
0.5
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2338543 |