Field emission from honeycomblike network of vertically aligned AlN nanoplatelets
Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100nm. Field emission (FE) measurements showed that this nanostructure has a l...
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Veröffentlicht in: | Applied physics letters 2006-08, Vol.89 (9) |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2–5.0V∕μm and a threshold field of 7.8–12.1V∕μm at sample-anode distances of 50–100μm. The fluctuation of FE current with density of 10mA∕cm2 over 5h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2337277 |