Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100nm. Field emission (FE) measurements showed that this nanostructure has a l...

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Veröffentlicht in:Applied physics letters 2006-08, Vol.89 (9)
Hauptverfasser: Tang, Y. B., Cong, H. T., Cheng, H.-M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2–5.0V∕μm and a threshold field of 7.8–12.1V∕μm at sample-anode distances of 50–100μm. The fluctuation of FE current with density of 10mA∕cm2 over 5h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2337277