High-performance ZnO∕ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure

The authors propose a new structure of ZnO∕ZnMgO field-effect transistors (FETs) for demonstrating high-performance capability of ZnO-based FETs. A very thin (2nm) ZnMgO cap layer is used for forming a hetero-metal-insulator-semiconductor (hetero-MIS) gate structure together with a 50-nm-thick Al2O3...

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Veröffentlicht in:Applied physics letters 2006-07, Vol.89 (5)
Hauptverfasser: Sasa, Shigehiko, Ozaki, Masashi, Koike, Kazuto, Yano, Mitsuaki, Inoue, Masataka
Format: Artikel
Sprache:eng
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Zusammenfassung:The authors propose a new structure of ZnO∕ZnMgO field-effect transistors (FETs) for demonstrating high-performance capability of ZnO-based FETs. A very thin (2nm) ZnMgO cap layer is used for forming a hetero-metal-insulator-semiconductor (hetero-MIS) gate structure together with a 50-nm-thick Al2O3 gate dielectric. The 1-μm-gate device showed a complete FET operation and an extrinsic transconductance of as high as 28mS∕mm and an effective mobility of 62cm2∕Vs. The high effective mobility maintained down to such a short channel device is likely due to the use of the hetero-MIS structure, demonstrating the high-performance capability of ZnO-based FETs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2261336