High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy
In N ∕ In 0.75 Ga 0.25 N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temper...
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Veröffentlicht in: | Applied physics letters 2006-07, Vol.89 (4) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In N ∕ In 0.75 Ga 0.25 N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temperature photoluminescence emissions from InN quantum wells were observed at the wavelength range from 1.59to1.95μm by changing the well thickness. The unstrained valence band offset of InN∕GaN was estimated to be ΔEv=0.9eV by comparing the experimental transition wavelengths of the MQWs and a theoretical calculation considering strain effects and built-in, mainly piezoelectric, fields. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2221869 |