Variation of structural, electrical, and optical properties of Zn1−xMgxO thin films

Zn 1 − x Mg x O thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn1−xMgxO thin films increased and the photoluminescence (PL) peak position of the Zn1−xMgxO thin films shifted from 370to356nm, indicat...

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Veröffentlicht in:Journal of applied physics 2006-08, Vol.100 (3)
Hauptverfasser: Kim, Jae Won, Kang, Hong Seong, Kim, Jong Hoon, Lee, Sang Yeol, Lee, Jung-Kun, Nastasi, Michael
Format: Artikel
Sprache:eng
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Zusammenfassung:Zn 1 − x Mg x O thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn1−xMgxO thin films increased and the photoluminescence (PL) peak position of the Zn1−xMgxO thin films shifted from 370to356nm, indicating a band gap expansion. Variations of the structural, electrical, and optical properties of Zn1−xMgO thin films have been observed and analyzed by x-ray diffraction, Hall measurements, and PL measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2219153