Variation of structural, electrical, and optical properties of Zn1−xMgxO thin films
Zn 1 − x Mg x O thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn1−xMgxO thin films increased and the photoluminescence (PL) peak position of the Zn1−xMgxO thin films shifted from 370to356nm, indicat...
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Veröffentlicht in: | Journal of applied physics 2006-08, Vol.100 (3) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Zn 1 − x Mg x O thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn1−xMgxO thin films increased and the photoluminescence (PL) peak position of the Zn1−xMgxO thin films shifted from 370to356nm, indicating a band gap expansion. Variations of the structural, electrical, and optical properties of Zn1−xMgO thin films have been observed and analyzed by x-ray diffraction, Hall measurements, and PL measurements. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.2219153 |