Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2006-06, Vol.88 (25)
Hauptverfasser: Nakano, Yoshitaka, Noda, Koji, Fujikawa, Hisayoshi, Morikawa, Takeshi, Ohwaki, Takeshi, Taga, Yasunori
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 25
container_start_page
container_title Applied physics letters
container_volume 88
creator Nakano, Yoshitaka
Noda, Koji
Fujikawa, Hisayoshi
Morikawa, Takeshi
Ohwaki, Takeshi
Taga, Yasunori
description We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.
doi_str_mv 10.1063/1.2214179
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2214179</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2214179</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-9a7f283c498e68584f9bb1c9c6e3835629b89e073ae7bee5984e16f8deba09863</originalsourceid><addsrcrecordid>eNotkLtOxDAURC0EEmGh4A9csoUX3zjxo0QrXtJKNEtFEdnOjTDKCztB5O9ZYKvRFHNGOoRcA98Al-IWNnkOBShzQjLgSjEBoE9JxjkXTJoSzslFSh-HWuZCZORtH-1IW_zCNtHQ0ymGdKPZ-1LH4Xv5nEM_tKHHNbXt3IV-7mia5jpgTd1Ca8SR_W3pME7B25amEf0Uh-SHcbkkZ41tE14dc0VeH-732ye2e3l83t7tmM9NOTFjVZNr4QujUepSF41xDrzxEoUWpcyN0wa5EhaVQyyNLhBko2t0lhstxYqs_7n-cJwiNtUYQ2fjUgGvfq1UUB2tiB9YMlWn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Nakano, Yoshitaka ; Noda, Koji ; Fujikawa, Hisayoshi ; Morikawa, Takeshi ; Ohwaki, Takeshi ; Taga, Yasunori</creator><creatorcontrib>Nakano, Yoshitaka ; Noda, Koji ; Fujikawa, Hisayoshi ; Morikawa, Takeshi ; Ohwaki, Takeshi ; Taga, Yasunori</creatorcontrib><description>We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2214179</identifier><language>eng</language><ispartof>Applied physics letters, 2006-06, Vol.88 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-9a7f283c498e68584f9bb1c9c6e3835629b89e073ae7bee5984e16f8deba09863</citedby><cites>FETCH-LOGICAL-c295t-9a7f283c498e68584f9bb1c9c6e3835629b89e073ae7bee5984e16f8deba09863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Nakano, Yoshitaka</creatorcontrib><creatorcontrib>Noda, Koji</creatorcontrib><creatorcontrib>Fujikawa, Hisayoshi</creatorcontrib><creatorcontrib>Morikawa, Takeshi</creatorcontrib><creatorcontrib>Ohwaki, Takeshi</creatorcontrib><creatorcontrib>Taga, Yasunori</creatorcontrib><title>Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy</title><title>Applied physics letters</title><description>We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkLtOxDAURC0EEmGh4A9csoUX3zjxo0QrXtJKNEtFEdnOjTDKCztB5O9ZYKvRFHNGOoRcA98Al-IWNnkOBShzQjLgSjEBoE9JxjkXTJoSzslFSh-HWuZCZORtH-1IW_zCNtHQ0ymGdKPZ-1LH4Xv5nEM_tKHHNbXt3IV-7mia5jpgTd1Ca8SR_W3pME7B25amEf0Uh-SHcbkkZ41tE14dc0VeH-732ye2e3l83t7tmM9NOTFjVZNr4QujUepSF41xDrzxEoUWpcyN0wa5EhaVQyyNLhBko2t0lhstxYqs_7n-cJwiNtUYQ2fjUgGvfq1UUB2tiB9YMlWn</recordid><startdate>20060619</startdate><enddate>20060619</enddate><creator>Nakano, Yoshitaka</creator><creator>Noda, Koji</creator><creator>Fujikawa, Hisayoshi</creator><creator>Morikawa, Takeshi</creator><creator>Ohwaki, Takeshi</creator><creator>Taga, Yasunori</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060619</creationdate><title>Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy</title><author>Nakano, Yoshitaka ; Noda, Koji ; Fujikawa, Hisayoshi ; Morikawa, Takeshi ; Ohwaki, Takeshi ; Taga, Yasunori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-9a7f283c498e68584f9bb1c9c6e3835629b89e073ae7bee5984e16f8deba09863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakano, Yoshitaka</creatorcontrib><creatorcontrib>Noda, Koji</creatorcontrib><creatorcontrib>Fujikawa, Hisayoshi</creatorcontrib><creatorcontrib>Morikawa, Takeshi</creatorcontrib><creatorcontrib>Ohwaki, Takeshi</creatorcontrib><creatorcontrib>Taga, Yasunori</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakano, Yoshitaka</au><au>Noda, Koji</au><au>Fujikawa, Hisayoshi</au><au>Morikawa, Takeshi</au><au>Ohwaki, Takeshi</au><au>Taga, Yasunori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy</atitle><jtitle>Applied physics letters</jtitle><date>2006-06-19</date><risdate>2006</risdate><volume>88</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.</abstract><doi>10.1063/1.2214179</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2006-06, Vol.88 (25)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2214179
source AIP Journals Complete; AIP Digital Archive
title Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T21%3A50%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Trap%20levels%20in%20tris(8-hydroxyquinoline)%20aluminum%20studied%20by%20deep-level%20optical%20spectroscopy&rft.jtitle=Applied%20physics%20letters&rft.au=Nakano,%20Yoshitaka&rft.date=2006-06-19&rft.volume=88&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2214179&rft_dat=%3Ccrossref%3E10_1063_1_2214179%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true