Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy

We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1....

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Veröffentlicht in:Applied physics letters 2006-06, Vol.88 (25)
Hauptverfasser: Nakano, Yoshitaka, Noda, Koji, Fujikawa, Hisayoshi, Morikawa, Takeshi, Ohwaki, Takeshi, Taga, Yasunori
Format: Artikel
Sprache:eng
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Zusammenfassung:We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2214179