Sol-gel synthesis and photoluminescence of p-type semiconductor Cr2O3 nanowires

Rhombohedral structure p-type semiconductor Cr2O3 nanowires were generated by sol-gel template technology with the diameters in the range of 100–300nm and the lengths ca. 10μm. A sharp ultraviolet photoluminescence band (full width at half maximum=13.8nm) at the wavelength of 385nm (3.22eV in photon...

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Veröffentlicht in:Applied physics letters 2006-06, Vol.88 (24)
Hauptverfasser: Cao, Huaqiang, Qiu, Xianqing, Liang, Yu, Zhao, Meijuan, Zhu, Qiming
Format: Artikel
Sprache:eng
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Zusammenfassung:Rhombohedral structure p-type semiconductor Cr2O3 nanowires were generated by sol-gel template technology with the diameters in the range of 100–300nm and the lengths ca. 10μm. A sharp ultraviolet photoluminescence band (full width at half maximum=13.8nm) at the wavelength of 385nm (3.22eV in photon energy) was observed, which was attributed to the transition involving 3d3 electron of the Cr3+ ions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2213204