p -type metal-base transistor

In this work we present data from a novel p -type metal-base transistor with common-base gain α ∼ 1 , fabricated at ambient temperature and pressure by electrodepositing sequentially on a p -type Si collector, a Co base and a Cu 2 O emitter. The high gain and the dependence of potential between emitter and base ( V EB ) on the potential between collector and base ( V CB ) when the emitter current ( I E ) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.