Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2∕HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high-k film.