Raman study of N + -implanted ZnO

Raman study of N + -implanted ZnO

Raman scattering has been used to study the influence of nitrogen, a potential acceptor in ZnO, on the lattice dynamics of ZnO. It is found that N + implantation increased the lattice disorder and induced some vibration modes to be Raman active at 275, 504, and 644 cm − 1 , respectively. Based on th...

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Veröffentlicht in:Applied physics letters 2006-03, Vol.88 (10), p.101913-101913-3
Hauptverfasser: Wang, J. B., Zhong, H. M., Li, Z. F., Lu, Wei
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Zhong, H. M.
Li, Z. F.
Lu, Wei
description Raman scattering has been used to study the influence of nitrogen, a potential acceptor in ZnO, on the lattice dynamics of ZnO. It is found that N + implantation increased the lattice disorder and induced some vibration modes to be Raman active at 275, 504, and 644 cm − 1 , respectively. Based on theoretical and experimental study, the origin of the additional Raman peak at about 275 cm − 1 is attributed to the vibration of Zn atoms, where part of its first nearest neighbor O atoms are replaced by N atoms in the crystal lattice.
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title Raman study of N + -implanted ZnO
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