Raman study of N + -implanted ZnO

Raman scattering has been used to study the influence of nitrogen, a potential acceptor in ZnO, on the lattice dynamics of ZnO. It is found that N + implantation increased the lattice disorder and induced some vibration modes to be Raman active at 275, 504, and 644 cm − 1 , respectively. Based on theoretical and experimental study, the origin of the additional Raman peak at about 275 cm − 1 is attributed to the vibration of Zn atoms, where part of its first nearest neighbor O atoms are replaced by N atoms in the crystal lattice.