Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films
The valence band structures of Al–N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attribut...
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| Veröffentlicht in: | Applied physics letters 2006-02, Vol.88 (6) |
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| container_title | Applied physics letters |
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| creator | Cong, G. W. Peng, W. Q. Wei, H. Y. Han, X. X. Wu, J. J. Liu, X. L. Zhu, Q. S. Wang, Z. G. Lu, J. G. Ye, Z. Z. Zhu, L. P. Qian, H. J. Su, R. Hong, C. H. Zhong, J. Ibrahim, K. Hu, T. D. |
| description | The valence band structures of Al–N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al–N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al–N increased the relative quantity of Zn–N in ZnO:(Al, N), while N–N decreased that of Zn–N in ZnO:N. |
| doi_str_mv | 10.1063/1.2171804 |
| format | Article |
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W. ; Peng, W. Q. ; Wei, H. Y. ; Han, X. X. ; Wu, J. J. ; Liu, X. L. ; Zhu, Q. S. ; Wang, Z. G. ; Lu, J. G. ; Ye, Z. Z. ; Zhu, L. P. ; Qian, H. J. ; Su, R. ; Hong, C. H. ; Zhong, J. ; Ibrahim, K. ; Hu, T. D.</creator><creatorcontrib>Cong, G. W. ; Peng, W. Q. ; Wei, H. Y. ; Han, X. X. ; Wu, J. J. ; Liu, X. L. ; Zhu, Q. S. ; Wang, Z. G. ; Lu, J. G. ; Ye, Z. Z. ; Zhu, L. P. ; Qian, H. J. ; Su, R. ; Hong, C. H. ; Zhong, J. ; Ibrahim, K. ; Hu, T. D.</creatorcontrib><description>The valence band structures of Al–N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al–N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al–N increased the relative quantity of Zn–N in ZnO:(Al, N), while N–N decreased that of Zn–N in ZnO:N.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2171804</identifier><language>eng</language><ispartof>Applied physics letters, 2006-02, Vol.88 (6)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-7b0fa675516cebe457ee9eca9ca073edf3f8434c598fa62503579018217034d93</citedby><cites>FETCH-LOGICAL-c295t-7b0fa675516cebe457ee9eca9ca073edf3f8434c598fa62503579018217034d93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cong, G. W.</creatorcontrib><creatorcontrib>Peng, W. Q.</creatorcontrib><creatorcontrib>Wei, H. 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The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al–N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. 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H.</creatorcontrib><creatorcontrib>Zhong, J.</creatorcontrib><creatorcontrib>Ibrahim, K.</creatorcontrib><creatorcontrib>Hu, T. D.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cong, G. W.</au><au>Peng, W. Q.</au><au>Wei, H. Y.</au><au>Han, X. X.</au><au>Wu, J. J.</au><au>Liu, X. L.</au><au>Zhu, Q. S.</au><au>Wang, Z. G.</au><au>Lu, J. G.</au><au>Ye, Z. Z.</au><au>Zhu, L. P.</au><au>Qian, H. J.</au><au>Su, R.</au><au>Hong, C. H.</au><au>Zhong, J.</au><au>Ibrahim, K.</au><au>Hu, T. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films</atitle><jtitle>Applied physics letters</jtitle><date>2006-02-06</date><risdate>2006</risdate><volume>88</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The valence band structures of Al–N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al–N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al–N increased the relative quantity of Zn–N in ZnO:(Al, N), while N–N decreased that of Zn–N in ZnO:N.</abstract><doi>10.1063/1.2171804</doi></addata></record> |
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| title | Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films |
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