Photoresponse of gated p-silicon field emitter array and correlation with theoretical models

Improved fabrication and conditioning techniques for gated p-Si field emitter arrays (FEAs) (1×1mm2 in size with 50×50 emitters) greatly reduces the bulk damage and surface states. Consequently, only 0.9μA of the anode dark field-emission current was measured for 50V applied gate potential with a very low gate leakage current. At these low gate leakage currents, the transition between the tunneling-limited field-emission regime and the supply-limited saturation regime is clearly revealed in current-voltage plots. This transition is accompanied by a reduction in the anode current fluctuation. The standard deviation of the noise current drops from a few percent in the tunneling-limited regime to