Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)

Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)

We present spin-transfer switching results for MgO-based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance ratio of up to 150% and low intrinsic switching current density ( J c 0 ) of ( 2 - 3 ) × 10 6 A ∕ cm 2 . The low intrinsic switching current density is attributed to hi...

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Veröffentlicht in:Journal of applied physics 2006-04, Vol.99 (8), p.08G510-08G510-5
Hauptverfasser: Diao, Zhitao, Pakala, Mahendra, Panchula, Alex, Ding, Yunfei, Apalkov, Dmytro, Wang, Lien-Chang, Chen, Eugene, Huai, Yiming
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Sprache:eng
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Zusammenfassung:We present spin-transfer switching results for MgO-based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance ratio of up to 150% and low intrinsic switching current density ( J c 0 ) of ( 2 - 3 ) × 10 6 A ∕ cm 2 . The low intrinsic switching current density is attributed to high tunneling spin polarization (TSP) in MgO-based MTJs. The current switching data are discussed based on a qualitative study of TSP in MgO-based MTJs. Additional film stack modification needed to decrease the switching current to meet the requirement of advanced magnetoresistive random access memory application is also discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2165169