Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

Two methods to form nanoparticles at a certain depth in a thin oxide layer by negative-ion implantation into the oxide layer of silicon substrate have been investigated. One method is by implantation at a low energy and the other is by a thermal diffusion after implantation. Regarding the low-energy...

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Veröffentlicht in:Review of scientific instruments 2006-03, Vol.77 (3)
Hauptverfasser: Tsuji, Hiroshi, Arai, Nobutoshi, Gotoh, Naoyuki, Minotani, Takashi, Ishibashi, Toyoji, Okumine, Tetsuya, Adachi, Kouichiro, Kotaki, Hiroshi, Gotoh, Yasuhito, Ishikawa, Junzo
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Sprache:eng
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Zusammenfassung:Two methods to form nanoparticles at a certain depth in a thin oxide layer by negative-ion implantation into the oxide layer of silicon substrate have been investigated. One method is by implantation at a low energy and the other is by a thermal diffusion after implantation. Regarding the low-energy implantation, about 1keV of ion energy is required. In general, a surface charge-up of the oxide layer arises from a positive-ion implantation to affect ion penetration depth. In this research, we used negative ion implantation because of its advantage of almost “charge-up-free” feature, even for insulating materials. We obtained delta-layered gold nanoparticles (Au NPs) in a 25nm thick SiO2 layer on Si by the low-energy implantation method of gold negative ions at 1keV. The center depth and an average diameter of the delta-layered Au NPs were 5nm and 7nm, respectively. As by the thermal diffusion after implantation, silver negative ions were implanted into 25nm thick SiO2∕Si at 10keV with 5×1015ions∕cm2 at room temperature. Implanted atoms diffused from the implanted site, depending on annealing temperature. Only after annealing at 700°C, delta-layered silver nanoparticles (Ag NPs) were obtained near the interface of SiO2∕Si.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.2163287