Characteristics of HfO2–Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature

The properties of Al2O3–HfO2 laminated films with incorporated N were investigated as a function of stack structure and annealing temperature by high-resolution x-ray photoelectron spectroscopy, and medium energy ion scattering (MEIS). The MEIS results indicate that the diffusion of Si from the Si s...

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Veröffentlicht in:Applied physics letters 2005-12, Vol.87 (26)
Hauptverfasser: Cho, M.-H., Chung, K. B., Whang, C. N., Ko, D.-H., Kim, H. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:The properties of Al2O3–HfO2 laminated films with incorporated N were investigated as a function of stack structure and annealing temperature by high-resolution x-ray photoelectron spectroscopy, and medium energy ion scattering (MEIS). The MEIS results indicate that the diffusion of Si from the Si substrate into film increased in the case where a film with a buffer layer of Al2O3 was present during the annealing at temperatures up to 800°C, while it led to a relative suppression in a film with a HfO2 buffer layer. The incorporation of N was gradually increased in the film with a buffer layer of Al2O3 on Si with annealing temperature, while the increase was abrupt in the film with a buffer layer of HfO2 on Si at an annealing temperature of 900°C. The N incorporated into the film was very unstable, resulting in out diffusion from the film after an additional annealing treatment.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2147718