Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
Al 2 O 3 was deposited on In0.15Ga0.85As∕GaAs using atomic-layer deposition (ALD). Without any surface preparation or postthermal treatment, excellent electrical properties of Al2O3∕InGaAs∕GaAs heterostructures were obtained, in terms of low electrical leakage current density (10−8 to 10−9A∕cm2) and...
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| Veröffentlicht in: | Applied physics letters 2005-12, Vol.87 (25) |
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| container_title | Applied physics letters |
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| creator | Huang, M. L. Chang, Y. C. Chang, C. H. Lee, Y. J. Chang, P. Kwo, J. Wu, T. B. Hong, M. |
| description | Al 2 O 3 was deposited on In0.15Ga0.85As∕GaAs using atomic-layer deposition (ALD). Without any surface preparation or postthermal treatment, excellent electrical properties of Al2O3∕InGaAs∕GaAs heterostructures were obtained, in terms of low electrical leakage current density (10−8 to 10−9A∕cm2) and low interfacial density of states (Dit) in the range of 1012cm−2eV−1. The interfacial reaction and structural properties studied by high-resolution x-ray photoelectron spectroscopy (HRXPS) and high-resolution transmission electron microscopy (HRTEM). The depth profile of HRXPS, using synchrotron radiation beam and low-energy Ar+ sputtering, exhibited no residual arsenic oxides at interface. The removal of the arsenic oxides from Al2O3∕InGaAs heterostructures during the ALD process ensures the Fermi-level unpinning, which was observed in the capacitance-voltage measurements. The HRTEM shows sharp transition from amorphous oxide to single crystalline semiconductor. |
| doi_str_mv | 10.1063/1.2146060 |
| format | Article |
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L. ; Chang, Y. C. ; Chang, C. H. ; Lee, Y. J. ; Chang, P. ; Kwo, J. ; Wu, T. B. ; Hong, M.</creator><creatorcontrib>Huang, M. L. ; Chang, Y. C. ; Chang, C. H. ; Lee, Y. J. ; Chang, P. ; Kwo, J. ; Wu, T. B. ; Hong, M.</creatorcontrib><description>Al 2 O 3 was deposited on In0.15Ga0.85As∕GaAs using atomic-layer deposition (ALD). Without any surface preparation or postthermal treatment, excellent electrical properties of Al2O3∕InGaAs∕GaAs heterostructures were obtained, in terms of low electrical leakage current density (10−8 to 10−9A∕cm2) and low interfacial density of states (Dit) in the range of 1012cm−2eV−1. The interfacial reaction and structural properties studied by high-resolution x-ray photoelectron spectroscopy (HRXPS) and high-resolution transmission electron microscopy (HRTEM). The depth profile of HRXPS, using synchrotron radiation beam and low-energy Ar+ sputtering, exhibited no residual arsenic oxides at interface. The removal of the arsenic oxides from Al2O3∕InGaAs heterostructures during the ALD process ensures the Fermi-level unpinning, which was observed in the capacitance-voltage measurements. 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The depth profile of HRXPS, using synchrotron radiation beam and low-energy Ar+ sputtering, exhibited no residual arsenic oxides at interface. The removal of the arsenic oxides from Al2O3∕InGaAs heterostructures during the ALD process ensures the Fermi-level unpinning, which was observed in the capacitance-voltage measurements. 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B.</creator><creator>Hong, M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20051219</creationdate><title>Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3</title><author>Huang, M. L. ; Chang, Y. C. ; Chang, C. H. ; Lee, Y. J. ; Chang, P. ; Kwo, J. ; Wu, T. B. ; Hong, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-1531ad2b9ace798bf90d65ce48dd7de5d8083e6b9bcb79047a7d075915f620e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, M. L.</creatorcontrib><creatorcontrib>Chang, Y. C.</creatorcontrib><creatorcontrib>Chang, C. H.</creatorcontrib><creatorcontrib>Lee, Y. J.</creatorcontrib><creatorcontrib>Chang, P.</creatorcontrib><creatorcontrib>Kwo, J.</creatorcontrib><creatorcontrib>Wu, T. B.</creatorcontrib><creatorcontrib>Hong, M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, M. L.</au><au>Chang, Y. C.</au><au>Chang, C. H.</au><au>Lee, Y. J.</au><au>Chang, P.</au><au>Kwo, J.</au><au>Wu, T. B.</au><au>Hong, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3</atitle><jtitle>Applied physics letters</jtitle><date>2005-12-19</date><risdate>2005</risdate><volume>87</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Al 2 O 3 was deposited on In0.15Ga0.85As∕GaAs using atomic-layer deposition (ALD). Without any surface preparation or postthermal treatment, excellent electrical properties of Al2O3∕InGaAs∕GaAs heterostructures were obtained, in terms of low electrical leakage current density (10−8 to 10−9A∕cm2) and low interfacial density of states (Dit) in the range of 1012cm−2eV−1. The interfacial reaction and structural properties studied by high-resolution x-ray photoelectron spectroscopy (HRXPS) and high-resolution transmission electron microscopy (HRTEM). The depth profile of HRXPS, using synchrotron radiation beam and low-energy Ar+ sputtering, exhibited no residual arsenic oxides at interface. The removal of the arsenic oxides from Al2O3∕InGaAs heterostructures during the ALD process ensures the Fermi-level unpinning, which was observed in the capacitance-voltage measurements. The HRTEM shows sharp transition from amorphous oxide to single crystalline semiconductor.</abstract><doi>10.1063/1.2146060</doi></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 |
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