GaAs-based room-temperature continuous-wave 1.59 μ m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 μ m GaInNAs ∕ GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μ m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μ m range GaInNAsSb ∕ GaNAs QWs are quite comparable to the 1.3 μ m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μ m lasing of a GaInNAsSb ∕ GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA ∕ cm 2 with as-cleaved facet mirrors.