Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors

The present work investigates the switch-on transient decay in polycrystalline thin-film transistors. The decay is found to follow the stretched exponential relaxation model independently of the polycrystalline film properties and the device bias conditions or operating temperature. The temperature dependence of the stretched exponential relaxation allows for the determination of the decay time and, furthermore, the process activation energy.