Low-threshold-current operation of 1540 nm GaInAsP ∕ InP distributed-feedback lasers with multiple-quantum-wire active regions
1540 nm wavelength GaInAsP ∕ InP distributed-feedback lasers consisting of multiple-quantum-wire active regions with the wire width of 24 nm were realized by electron-beam lithography, CH 4 ∕ H 2 reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. A threshold cu...
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| Veröffentlicht in: | Applied physics letters 2005-11, Vol.87 (22), p.223120-223120-3 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | 1540 nm wavelength
GaInAsP
∕
InP
distributed-feedback lasers consisting of multiple-quantum-wire active regions with the wire width of 24 nm were realized by electron-beam lithography,
CH
4
∕
H
2
reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. A threshold current as low as 2.7 mA
(
threshold current density
=
270
A
∕
cm
2
)
, a differential quantum efficiency of
19
%
∕
facet
and a submode suppression ratio of 51 dB at a bias current of twice the threshold were achieved for the stripe width of
3.0
μ
m
and the cavity length of
330
μ
m
under a room-temperature continuous-wave condition. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2138789 |