Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering

For deep submicron metal-oxide-semiconductor (MOS) transistors with pocket implant, the electron mobility of the short channel transistor is always smaller than that of the long channel transistor in the above-threshold regime, resulting in serious error in effective channel length ( L eff ) measurement based on the assumption that the mobility is independent of gate length. Our theory predicts that when the gate oxide is very thin the electron mobility is approximately equal for short and long channel MOS transistors in the subthreshold regime. Thus it is possible to perform L eff measurement in the subthreshold region of MOS transistors with ultrathin gate oxide.