Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures
We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415MW∕cm2 at 13 K. In addition, we have demonstrated lasi...
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Veröffentlicht in: | Applied physics letters 2005-10, Vol.87 (14) |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415MW∕cm2 at 13 K. In addition, we have demonstrated lasing up to 130 K. This indicates that the BeMgZnSe compound is promising as a new candidate for ultraviolet (UV) laser diodes, which possess potential application for UV optoelectronic integrated circuits UV-OEICs on silicon substrates. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2081121 |