Single-crystalline nanotubes of IIB-VI semiconductors
Wurtzite-type CdS and CdSe nanotubes have been grown via a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant...
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| Veröffentlicht in: | Applied physics letters 2005-09, Vol.87 (11), p.113107-113107-3 |
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| container_end_page | 113107-3 |
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| container_title | Applied physics letters |
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| creator | Hu, J. Q. Bando, Y. Zhan, J. H. Liao, M. Y. Golberg, D. Yuan, X. L. Sekiguchi, T. |
| description | Wurtzite-type CdS and CdSe nanotubes have been grown
via
a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at
∼
512
and
∼
724
nm
. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes. |
| doi_str_mv | 10.1063/1.2042634 |
| format | Article |
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via
a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at
∼
512
and
∼
724
nm
. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2042634</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-09, Vol.87 (11), p.113107-113107-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-168ce487569a9b11b00e447fa21c236e6bf4fd6fbf502d4926ffc2bc7f2b7b6c3</citedby><cites>FETCH-LOGICAL-c385t-168ce487569a9b11b00e447fa21c236e6bf4fd6fbf502d4926ffc2bc7f2b7b6c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2042634$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Hu, J. Q.</creatorcontrib><creatorcontrib>Bando, Y.</creatorcontrib><creatorcontrib>Zhan, J. H.</creatorcontrib><creatorcontrib>Liao, M. Y.</creatorcontrib><creatorcontrib>Golberg, D.</creatorcontrib><creatorcontrib>Yuan, X. L.</creatorcontrib><creatorcontrib>Sekiguchi, T.</creatorcontrib><title>Single-crystalline nanotubes of IIB-VI semiconductors</title><title>Applied physics letters</title><description>Wurtzite-type CdS and CdSe nanotubes have been grown
via
a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at
∼
512
and
∼
724
nm
. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1z0tLAzEUhuEgCo7Vhf9gti5Sc3Kd2QharA4UXHjZhiSTSGSakWS66L-3Ml24cXU48PLBg9A1kCUQyW5hSQmnkvETVAFRCjOA5hRVhBCGZSvgHF2U8nV4BWWsQuI1ps_BY5f3ZTLDEJOvk0njtLO-1GOou-4Bf3R18dvoxtTv3DTmconOghmKvzreBXpfP76tnvHm5alb3W-wY42YMMjGed4oIVvTWgBLiOdcBUPBUSa9tIGHXgYbBKE9b6kMwVHrVKBWWenYAt3Muy6PpWQf9HeOW5P3Goj-9WrQR--hvZvb4uJkpjim_-MZrf-gdWI__5Vc9Q</recordid><startdate>20050912</startdate><enddate>20050912</enddate><creator>Hu, J. Q.</creator><creator>Bando, Y.</creator><creator>Zhan, J. H.</creator><creator>Liao, M. Y.</creator><creator>Golberg, D.</creator><creator>Yuan, X. L.</creator><creator>Sekiguchi, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050912</creationdate><title>Single-crystalline nanotubes of IIB-VI semiconductors</title><author>Hu, J. Q. ; Bando, Y. ; Zhan, J. H. ; Liao, M. Y. ; Golberg, D. ; Yuan, X. L. ; Sekiguchi, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-168ce487569a9b11b00e447fa21c236e6bf4fd6fbf502d4926ffc2bc7f2b7b6c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, J. Q.</creatorcontrib><creatorcontrib>Bando, Y.</creatorcontrib><creatorcontrib>Zhan, J. H.</creatorcontrib><creatorcontrib>Liao, M. Y.</creatorcontrib><creatorcontrib>Golberg, D.</creatorcontrib><creatorcontrib>Yuan, X. L.</creatorcontrib><creatorcontrib>Sekiguchi, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, J. Q.</au><au>Bando, Y.</au><au>Zhan, J. H.</au><au>Liao, M. Y.</au><au>Golberg, D.</au><au>Yuan, X. L.</au><au>Sekiguchi, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-crystalline nanotubes of IIB-VI semiconductors</atitle><jtitle>Applied physics letters</jtitle><date>2005-09-12</date><risdate>2005</risdate><volume>87</volume><issue>11</issue><spage>113107</spage><epage>113107-3</epage><pages>113107-113107-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Wurtzite-type CdS and CdSe nanotubes have been grown
via
a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at
∼
512
and
∼
724
nm
. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2042634</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-09, Vol.87 (11), p.113107-113107-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | American Institute of Physics (AIP) Journals; AIP Digital Archive |
| title | Single-crystalline nanotubes of IIB-VI semiconductors |
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