Single-crystalline nanotubes of IIB-VI semiconductors

Wurtzite-type CdS and CdSe nanotubes have been grown via a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant...

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Veröffentlicht in:Applied physics letters 2005-09, Vol.87 (11), p.113107-113107-3
Hauptverfasser: Hu, J. Q., Bando, Y., Zhan, J. H., Liao, M. Y., Golberg, D., Yuan, X. L., Sekiguchi, T.
Format: Artikel
Sprache:eng
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Zusammenfassung:Wurtzite-type CdS and CdSe nanotubes have been grown via a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at ∼ 512 and ∼ 724 nm . The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2042634