ZnO nanopencils: Efficient field emitters
ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution...
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| Veröffentlicht in: | Applied physics letters 2005-07, Vol.87 (1), p.013110-013110-3 |
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| creator | Wang, R. C. Liu, C. P. Huang, J. L. Chen, S.-J. Tseng, Y.-K. Kung, S.-C. |
| description | ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of
3.7
V
∕
μ
m
at a current density of
10
μ
A
∕
cm
2
. The emission current density reached
1.3
mA
∕
cm
2
at an applied field of
4.6
V
∕
μ
m
. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils. |
| doi_str_mv | 10.1063/1.1977187 |
| format | Article |
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3.7
V
∕
μ
m
at a current density of
10
μ
A
∕
cm
2
. The emission current density reached
1.3
mA
∕
cm
2
at an applied field of
4.6
V
∕
μ
m
. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1977187</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-07, Vol.87 (1), p.013110-013110-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-e851ca3fabc6c324a2b2dc9f405d64eb663a4faf2629eadef67e8b52120ffd533</citedby><cites>FETCH-LOGICAL-c349t-e851ca3fabc6c324a2b2dc9f405d64eb663a4faf2629eadef67e8b52120ffd533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1977187$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,1561,4514,27931,27932,76392,76398</link.rule.ids></links><search><creatorcontrib>Wang, R. C.</creatorcontrib><creatorcontrib>Liu, C. P.</creatorcontrib><creatorcontrib>Huang, J. L.</creatorcontrib><creatorcontrib>Chen, S.-J.</creatorcontrib><creatorcontrib>Tseng, Y.-K.</creatorcontrib><creatorcontrib>Kung, S.-C.</creatorcontrib><title>ZnO nanopencils: Efficient field emitters</title><title>Applied physics letters</title><description>ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of
3.7
V
∕
μ
m
at a current density of
10
μ
A
∕
cm
2
. The emission current density reached
1.3
mA
∕
cm
2
at an applied field of
4.6
V
∕
μ
m
. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1z8FLwzAUx_EgCtbpwf-g1x068_KapBU8yNhUGOyiFy8hTfMg0qWjycX_3sp28OLp8eDLDz6M3QNfAVf4ACtotYZGX7ACuNYVAjSXrOCcY6VaCdfsJqWv-ZUCsWDLz7gvo43j0UcXhvRYboiCCz7mkoIf-tIfQs5-SrfsiuyQ_N35LtjHdvO-fq12-5e39fOucli3ufKNBGeRbOeUQ1Fb0YnetVRz2avad0qhrcmSUKL1tvektG86KUBwol4iLtjytOumMaXJkzlO4WCnbwPc_BoNmLNxbp9ObXIh2xzG-H88Q80fqJmd-AMAZ1hl</recordid><startdate>20050704</startdate><enddate>20050704</enddate><creator>Wang, R. C.</creator><creator>Liu, C. P.</creator><creator>Huang, J. L.</creator><creator>Chen, S.-J.</creator><creator>Tseng, Y.-K.</creator><creator>Kung, S.-C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050704</creationdate><title>ZnO nanopencils: Efficient field emitters</title><author>Wang, R. C. ; Liu, C. P. ; Huang, J. L. ; Chen, S.-J. ; Tseng, Y.-K. ; Kung, S.-C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-e851ca3fabc6c324a2b2dc9f405d64eb663a4faf2629eadef67e8b52120ffd533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, R. C.</creatorcontrib><creatorcontrib>Liu, C. P.</creatorcontrib><creatorcontrib>Huang, J. L.</creatorcontrib><creatorcontrib>Chen, S.-J.</creatorcontrib><creatorcontrib>Tseng, Y.-K.</creatorcontrib><creatorcontrib>Kung, S.-C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, R. C.</au><au>Liu, C. P.</au><au>Huang, J. L.</au><au>Chen, S.-J.</au><au>Tseng, Y.-K.</au><au>Kung, S.-C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ZnO nanopencils: Efficient field emitters</atitle><jtitle>Applied physics letters</jtitle><date>2005-07-04</date><risdate>2005</risdate><volume>87</volume><issue>1</issue><spage>013110</spage><epage>013110-3</epage><pages>013110-013110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of
3.7
V
∕
μ
m
at a current density of
10
μ
A
∕
cm
2
. The emission current density reached
1.3
mA
∕
cm
2
at an applied field of
4.6
V
∕
μ
m
. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1977187</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-07, Vol.87 (1), p.013110-013110-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1977187 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | ZnO nanopencils: Efficient field emitters |
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