ZnO nanopencils: Efficient field emitters
ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution...
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Veröffentlicht in: | Applied physics letters 2005-07, Vol.87 (1), p.013110-013110-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of
3.7
V
∕
μ
m
at a current density of
10
μ
A
∕
cm
2
. The emission current density reached
1.3
mA
∕
cm
2
at an applied field of
4.6
V
∕
μ
m
. The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1977187 |