ZnO nanopencils: Efficient field emitters

ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution...

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Veröffentlicht in:Applied physics letters 2005-07, Vol.87 (1), p.013110-013110-3
Hauptverfasser: Wang, R. C., Liu, C. P., Huang, J. L., Chen, S.-J., Tseng, Y.-K., Kung, S.-C.
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Sprache:eng
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Zusammenfassung:ZnO nanopencils were synthesized on a silicon wafer without catalysts at a low temperature of 550° C through a simple two-step pressure controlled thermal evaporation. Penholders were well-hexagonal faceted and the diameter of pen tips on the nanopencils was in the range of 20-30 nm. High-resolution transmission electron microscopy shows that the nanopencils were single crystals growing along the [0001] direction and the pen tips subtend a small angle with multiple surface perturbations. Field-emission measurements on the nanopencils show a low turn-on field of 3.7 V ∕ μ m at a current density of 10 μ A ∕ cm 2 . The emission current density reached 1.3 mA ∕ cm 2 at an applied field of 4.6 V ∕ μ m . The emission at the low field is attributed to the sharp tip and surface perturbations on the nanopencils.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1977187