Synthesis of blue-light-emitting Si1−xGex oxide nanowires

Blue-light-emitting Si1−xGex oxide nanowires have been grown on epitaxial Si0.8Ge0.2 alloys on silicon by thermal annealing in a quartz tube furnace in N2 ambient. The photoluminescence spectrum of Si1−xGex oxide nanostructures exhibits the blue-light emission with a peak at 415 nm, compared with th...

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Veröffentlicht in:Applied physics letters 2005-06, Vol.86 (26)
Hauptverfasser: He, J. H., Wu, W. W., Lee, S. W., Chen, L. J., Chueh, Y. L., Chou, L. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Blue-light-emitting Si1−xGex oxide nanowires have been grown on epitaxial Si0.8Ge0.2 alloys on silicon by thermal annealing in a quartz tube furnace in N2 ambient. The photoluminescence spectrum of Si1−xGex oxide nanostructures exhibits the blue-light emission with a peak at 415 nm, compared with the Si oxide nanowires with a peak at 470 nm. Nanowires with uncommon shapes, such as sunflowerlike and radiolarialike shape, have been observed. A field emission scanning electron microscope was used to monitor the growth of nanowires on the same patterned catalytic Au region. The growth can be understood in term of vapor-liquid-solid mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1949283