Epitaxial growth of NaxCoO2 thin films by pulsed-laser deposition

Single-phase thin films of NaxCoO2 have been grown epitaxially by pulsed-laser deposition technique. The growth conditions were studied based on the logpO2−1∕T phase diagram of Co–O2 using different types of substrate materials. For Na0.58CoO2, metallic behavior is found down to 4.2K. At the request...

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Veröffentlicht in:Applied physics letters 2005-05, Vol.86 (19)
Hauptverfasser: Krockenberger, Y., Fritsch, I., Cristiani, G., Matveev, A., Alff, L., Habermeier, H.-U., Keimer, B.
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Sprache:eng
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Zusammenfassung:Single-phase thin films of NaxCoO2 have been grown epitaxially by pulsed-laser deposition technique. The growth conditions were studied based on the logpO2−1∕T phase diagram of Co–O2 using different types of substrate materials. For Na0.58CoO2, metallic behavior is found down to 4.2K. At the request of the authors, this article is being retracted effective 4 January 2006.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1927272