Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix
Visible electroluminescence from silicon nanocrystals (Si-NCs) embedded in amorphous silicon nitride (a-SiNx) films has been observed. The Si-NC∕a-SiNx films were deposited by evaporating silicon from electron gun into the inductively coupled plasma of nitrogen. The density of Si-NCs in the a-SiNx m...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2005-05, Vol.86 (19) |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Visible electroluminescence from silicon nanocrystals (Si-NCs) embedded in amorphous silicon nitride (a-SiNx) films has been observed. The Si-NC∕a-SiNx films were deposited by evaporating silicon from electron gun into the inductively coupled plasma of nitrogen. The density of Si-NCs in the a-SiNx matrix was around 1012cm−2. Strong room temperature photoluminescence was observed in 2.8 and 3.0eV, different from literature values. The electroluminescence (EL) devices were fabricated with Si-NCs∕a-SiNx film as the active layer using the Al or Ca∕Ag cathode and the indium tin oxide anode. Through tunneling, the electrons and holes were respectively injected from the cathode and anode into Si-NCs and confined within Si-NCs for light emission by the high band gap a-SiNx matrix. For the device with Ca∕Ag cathode, the turn-on voltage was as low as 10V and the EL efficiency was about 1.6×10−1 Cd∕A. The EL spectra consisted of two broad peaks centered around 2.5 and 2.8eV. Our results demonstrate that Si-NCs∕a-SiNx nanocomposite films have potentials to be fabricated into electroluminescence devices using the low work function cathode. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1925311 |