Near-field and far-field dynamics of (Al,In)GaN laser diodes

Near-field and far-field dynamics of (Al,In)GaN laser diodes

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics ar...

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Veröffentlicht in:Applied physics letters 2005-04, Vol.86 (16), p.161112-161112-3
Hauptverfasser: Schwarz, Ulrich T., Pindl, Markus, Wegscheider, Werner, Eichler, Christoph, Scholz, Ferdinand, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred, Härle, Volker
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Sprache:eng
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Zusammenfassung:Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1900304