Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaN∕GaN quantum-well active layers
Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaN∕GaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150K, and brighter LE...
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Veröffentlicht in: | Applied physics letters 2005-03, Vol.86 (13) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaN∕GaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1890475 |