Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors
Hot-electron injection in high dielectric constant stacked-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied theoretically by combining a hybrid Monte Carlo/iterative simulation of hot carrier transport with a transfer-matrix calculation of the transmission probability thr...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2005-05, Vol.97 (10), p.104501-104501-3 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Hot-electron injection in high dielectric constant stacked-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied theoretically by combining a hybrid Monte Carlo/iterative simulation of hot carrier transport with a transfer-matrix calculation of the transmission probability through the insulators. It is shown that the reduced potential barrier between the silicon and the high dielectric constant material results in high gate currents in short channel MOSFETs even at low drain voltages. The structure may therefore find applications in electrically erasable programmable read-only memory devices. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1890445 |