Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots

We fabricated ordered InAs ∕ InP quantum-dot (QD) arrays using atomic-force-microscopic oxidation, wet etching, and regrowth by metalorganic chemical vapor deposition. The QDs exhibit single-dot photoluminescence peaking at wavelengths ranging from 1.22 to 1.45 μ m , mostly matching the telecommunication band of optical fibers. The site dependence of single peaks indicates the site controllability of single-dot light emitters, which might be useful in quantum information processing.