40 000 pixel arrays of ac-excited silicon microcavity plasma devices

Arrays of ( 50 μ m ) 2 Si microcavity plasma devices, as large as 40 000 pixels ( 200 × 200 ) with a packing density of 10 4 pixels cm − 2 , have been operated continuously in 500 - 900 Torr of Ne with ac excitation ( 5 - 20 kHz ) . More than two orders of magnitude larger than previously reported m...

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Veröffentlicht in:Applied physics letters 2005-03, Vol.86 (11), p.111501-111501-3
Hauptverfasser: Park, S.-J., Chen, K.-F., Ostrom, N. P., Eden, J. G.
Format: Artikel
Sprache:eng
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Zusammenfassung:Arrays of ( 50 μ m ) 2 Si microcavity plasma devices, as large as 40 000 pixels ( 200 × 200 ) with a packing density of 10 4 pixels cm − 2 , have been operated continuously in 500 - 900 Torr of Ne with ac excitation ( 5 - 20 kHz ) . More than two orders of magnitude larger than previously reported microplasma device arrays, 200 × 200 pixel structures produce uniform glow discharges in each pixel, have a power consumption of ∼ 0.85 W cm − 2 for p Ne = 700 Torr and an excitation frequency of 5 kHz , and exhibit maximum radiative efficiency for a Ne pressure of p Ne ≅ 700 Torr and an excitation frequency of 10 - 15 kHz . All arrays examined ( 10 × 10 → 200 × 200 ) are characterized by pixel-to-pixel emission intensities constant over the entire array to within ± 10 % , and no barriers to the successful operation of much larger arrays are apparent.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1880441