Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

Mg-doped Al0.7Ga0.3N epilayers (∼1μm) were grown on an AlN/sapphire template by metalorganic chemical vapor deposition and the electrical and optical properties of these epilayers were studied. For optimized Mg-doped Al0.7Ga0.3N epilayers, we have obtained a resistivity around 105Ωcm at room temperature and confirmed p-type conduction at elevated temperatures(>700K) with a resistivity of about 40Ωcm at 800 K. From the temperature dependent Hall effect measurement, the activation energy of Mg acceptor is found to be around 400 meV for Al0.7Ga0.3N alloy. The optimized Mg-doped Al0.7Ga0.3N epilayers have been incorporated into the deep-ultraviolet (UV) (λ