Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions

Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions

A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (

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Veröffentlicht in:Journal of applied physics 2005-04, Vol.97 (8)
Hauptverfasser: Koller, P. H. P., de Jonge, W. J. M., Coehoorn, R.
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container_title Journal of applied physics
container_volume 97
creator Koller, P. H. P.
de Jonge, W. J. M.
Coehoorn, R.
description A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (
doi_str_mv 10.1063/1.1872199
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1872199</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1872199</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-5b929dd33706d73bac6f437342a79882e28e623594c7c6c7397bad8d29b32d153</originalsourceid><addsrcrecordid>eNotkM1KAzEURoMoOFYXvkG2LqbmZybJXWrRKhS6qbgcMskdTW0zJUlB316Ls_rgO3AWh5BbzuacKXnP59xowQHOSMWZgVq3LTsnFWOC1wY0XJKrnLeMcW4kVOT90aYUMNHyGdxXxJypxwNGj9EhHYe_H-nefkQsY8IccrEnECLd2PX3RIKj5Rgj7uj2GF0JY8zX5GKwu4w3087I2_PTZvFSr9bL18XDqnZCsVK3PQjwXkrNlNeyt04NjdSyEVaDMQKFQSVkC43TTjktQffWGy-gl8LzVs7I3b_XpTHnhEN3SGFv00_HWXcq0vFuKiJ_Ab0WU4k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Koller, P. H. P. ; de Jonge, W. J. M. ; Coehoorn, R.</creator><creatorcontrib>Koller, P. H. P. ; de Jonge, W. J. M. ; Coehoorn, R.</creatorcontrib><description>A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (&lt;10%) for the thinnest barriers studied decreases rapidly with increasing thickness. From Rutherford backscattering analysis and current-voltage measurements evidence for a Ta thickness dependent oxidation rate has been found. Photoconductance spectra measured on the same junctions indicate changes in the hot-electron transport into the barrier, independent of the barrier asymmetry. These changes further indicate a modification of the junction structure with increasing Ta thickness, which can have a strong adverse effect on the spin polarization of the tunnel current.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1872199</identifier><language>eng</language><ispartof>Journal of applied physics, 2005-04, Vol.97 (8)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-5b929dd33706d73bac6f437342a79882e28e623594c7c6c7397bad8d29b32d153</citedby><cites>FETCH-LOGICAL-c260t-5b929dd33706d73bac6f437342a79882e28e623594c7c6c7397bad8d29b32d153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Koller, P. H. P.</creatorcontrib><creatorcontrib>de Jonge, W. J. M.</creatorcontrib><creatorcontrib>Coehoorn, R.</creatorcontrib><title>Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions</title><title>Journal of applied physics</title><description>A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (&lt;10%) for the thinnest barriers studied decreases rapidly with increasing thickness. From Rutherford backscattering analysis and current-voltage measurements evidence for a Ta thickness dependent oxidation rate has been found. Photoconductance spectra measured on the same junctions indicate changes in the hot-electron transport into the barrier, independent of the barrier asymmetry. These changes further indicate a modification of the junction structure with increasing Ta thickness, which can have a strong adverse effect on the spin polarization of the tunnel current.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEURoMoOFYXvkG2LqbmZybJXWrRKhS6qbgcMskdTW0zJUlB316Ls_rgO3AWh5BbzuacKXnP59xowQHOSMWZgVq3LTsnFWOC1wY0XJKrnLeMcW4kVOT90aYUMNHyGdxXxJypxwNGj9EhHYe_H-nefkQsY8IccrEnECLd2PX3RIKj5Rgj7uj2GF0JY8zX5GKwu4w3087I2_PTZvFSr9bL18XDqnZCsVK3PQjwXkrNlNeyt04NjdSyEVaDMQKFQSVkC43TTjktQffWGy-gl8LzVs7I3b_XpTHnhEN3SGFv00_HWXcq0vFuKiJ_Ab0WU4k</recordid><startdate>20050415</startdate><enddate>20050415</enddate><creator>Koller, P. H. P.</creator><creator>de Jonge, W. J. M.</creator><creator>Coehoorn, R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050415</creationdate><title>Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions</title><author>Koller, P. H. P. ; de Jonge, W. J. M. ; Coehoorn, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-5b929dd33706d73bac6f437342a79882e28e623594c7c6c7397bad8d29b32d153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koller, P. H. P.</creatorcontrib><creatorcontrib>de Jonge, W. J. M.</creatorcontrib><creatorcontrib>Coehoorn, R.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koller, P. H. P.</au><au>de Jonge, W. J. M.</au><au>Coehoorn, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions</atitle><jtitle>Journal of applied physics</jtitle><date>2005-04-15</date><risdate>2005</risdate><volume>97</volume><issue>8</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (&lt;10%) for the thinnest barriers studied decreases rapidly with increasing thickness. From Rutherford backscattering analysis and current-voltage measurements evidence for a Ta thickness dependent oxidation rate has been found. Photoconductance spectra measured on the same junctions indicate changes in the hot-electron transport into the barrier, independent of the barrier asymmetry. These changes further indicate a modification of the junction structure with increasing Ta thickness, which can have a strong adverse effect on the spin polarization of the tunnel current.</abstract><doi>10.1063/1.1872199</doi><oa>free_for_read</oa></addata></record>
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title Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T18%3A41%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Barrier%20thickness%20dependence%20of%20the%20magnetoresistance%20in%20TaOx%20magnetic%20tunnel%20junctions&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Koller,%20P.%20H.%20P.&rft.date=2005-04-15&rft.volume=97&rft.issue=8&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1872199&rft_dat=%3Ccrossref%3E10_1063_1_1872199%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true