Barrier thickness dependence of the magnetoresistance in TaOx magnetic tunnel junctions

A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (

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Veröffentlicht in:Journal of applied physics 2005-04, Vol.97 (8)
Hauptverfasser: Koller, P. H. P., de Jonge, W. J. M., Coehoorn, R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
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Zusammenfassung:A systematic study has been conducted on the dependence of the magnetoresistance (MR) ratio on the barrier thickness in TaOx-based magnetic tunnel junctions. The relatively low MR ratio (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1872199